Change of majority carrier type in PbS nanoparticle films
نویسندگان
چکیده
Change of majority carrier type from p to n in PbS semiconductor nanoparticle films grown from a solution bath has been achieved by applying an appropriate negative DC-bias to substrate during growth. This change is attributed to the observed decrease of sulfur content in the films which is accompanied by reduction in grain size on increasing the negative bias applied to the substrate. Pacs: 81.05.Hd; 73.61.Tm
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